Abstract：A novel on-chip electrostatic discharge (ESD) protection device (NMMEPD) was proposed. This device consists of N-well/P-well diode, parasitic SCR (silicon-controlled rectifier) , diode formed by high-K metal gate CMOS technology and embedded power clamp. There are multiple discharge paths in the proposed device, so it can achieve protection of 5 ESD stress modes for a single IO pin. Some details on the structure and working mechanism of various SCR modules under high-k process were analyzed and the modularization design was conducted. Some critical ESD parameters, such as the triggering voltage, holding voltage and etc., can be flexibly adjusted via reasonable configuration modular SCR to satisfy the multi-power supply domain applications of SoC (System on Chip) . The performance of the NMMEPD was validated comprehensively by means of the TLP, very-fast TLP and C-V. Experimental results showed that compact structure, less interconnect, low parasitic capacitance, and fast ESD stress response capabilities made the proposed device more suitable for high-speed IO interface circuit ESD protection application.

Keyword：ESD protection;modularization;monolithic integration;multi-power supply domain;high-speed IO;