张中卫, 杨海坤, 林树杰,等.用于黄疸检测仪的LED可控爆闪电路设计与发光特性研究[J].河南理工大学学报（自然科学版）,2025,44(3):156-163.

ZHANG Z W, YANG H K, LIN S J, et al. Design and luminescence characteristics of LED controllable burst circuit for jaundice detectors[J]. Journal of Henan Polytechnic University(Natural Science) , 2025, 44(3): 156-163.

用于黄疸检测仪的LED可控爆闪电路设计与发光特性研究

张中卫, 杨海坤, 林树杰, 刘泽宇

河南理工大学 物理与电子信息学院，河南 焦作 454000

摘要: 目的 黄疸检测仪是一种用于新生儿黄疸症状测量的精密光电检测仪器，光源发光信号强度大小是决定黄疸检测仪光电检测信号信噪比与测量精度的关键前提因素。为满足利用LED光源研制具有高信噪比、高测量精度微型黄疸检测仪的需要，以设计开发具有可控、高发光信号强度的LED光源驱动电路为目的，对用于黄疸检测仪的LED可控爆闪驱动电路与发光特性进行相关技术研究。  方法 首先，基于传统雪崩三极管脉冲电路原理可设计实现的LED光源脉冲频闪电路，引入可控硅、P型MOS开关管等电路控制器件，结合MCU芯片控制，设计用于LED可控爆闪发光的应用电路和电路时序驱动程序；其次，通过改变爆闪电路中的放电电容、驱动电压等技术特性参数，对LED光源在不同放电电容容值、驱动电压条件下的发光特性进行参数优化实验研究。  结果 结果表明，在爆闪电路雪崩三极管放电电容为100 μF，LED发光驱动放电电容为330 μF、电路驱动电压18 V条件下，LED光源发光信号强度峰值可达12 V，为正常恒压驱动条件下的12倍以上。  结论 设计的LED光源可控爆闪驱动电路可使LED的瞬时发光信号强度得到极大提升，这将为研制开发具有高光电信号强度、高信噪比的黄疸检测仪提供有力技术支撑。

关键词:黄疸检测;LED;爆闪;雪崩三极管;可控硅

doi:10.16186/j.cnki.1673-9787.2024030036

基金项目:国家自然科学基金资助项目（61405055）；河南省高校基本科研业务费专项资金资助项目（NSFRF210405）；河南理工大学博士基金资助项目（B2014-026）

收稿日期:2024/03/12

修回日期:2024/06/09

出版日期:2025-04-18

Design and luminescence characteristics of LED controllable burst circuit for jaundice detectors

ZHANG Zhongwei, YANG Haikun, LIN Shujie, LIU Zeyu

School of Physics and Electronic Information， Henan Polytechnic University， Jiaozuo 454000， Henan， China

Abstract: Objectives The jaundice detector is a precision optoelectronic detection instrument used for measuring jaundice severity in newborns. For the jaundice detector， the light source luminous intensity is a key factor that determining the signal-to-noise ratio and measurement accuracy of the photoelectric detection signal. To develop a miniature jaundice detector with high signal-to-noise ratio and measurement accuracy by using LED light sources， related technical research on the LED controllable burst driving circuit and luminous characteristics was conducted with the aim of designing and developing LED light source driver circuits that with controllable and high luminous signal intensity. Methods Firstly， the application circuit and circuit timing driver program that used for LED controllable burst flash were designed based on the LED light source pulse strobe circuit that realized by introducing Circuit control devices such as silicon controlled rectifier（SCR） and P-type MOSFETs and combining MCU control chip in the traditional avalanche transistor pulse circuit. Then， by changing the technical characteristic parameters such as discharge capacitance and driving voltage in the flash circuit， the parameter optimization experiments for the luminous characteristics of LED light sources were conducted under different discharge capacitance values and driving voltage conditions. Results The research results show that under the conditions of a discharge capacitance of 100 μF for the avalanche transistor in the burst flashing circuit， a discharge capacitance of 330 μF for driving the LED emission， and a circuit driving voltage of 18 V， the peak intensity of the LED light source emission signal could exceed 12 times that of normal constant voltage drive at 12 V. Conclusions The controllable burst flashing circuit， which was designed for LED light sources， significantly enhanced the instantaneous luminous intensity of LED. This achievement will offer robust technical support for the development of jaundice detectors with high photoelectric signal intensity and signal-to-noise ratio.

Key words: jaundice detection; LED; burst flashing; avalanche transistor; silicon controlled rectifier