Abstract：In order to explore the effects of annealing atmosphere on photo-electric properties of Al-doped zinc oxide ( AZO) thin films, AZO films were deposited onto fused quartz glass substrates by sol-gel technology. The effects of annealing atmospheres on the structural, electrical and optical properties of AZO films were investigated by using X-ray diffraction, scanning electron microscopy, UV-VIS-INR spectrophotometry and Hall-effect measurement system. The results showed that, the effects of annealing atmosphere on the conductivity of AZO films was significantly different. Compared with the films annealed in air, the changes of carrier mobility of AZO films annealed in N2 were not significant. The conductivity was improved because of the increase of carrier concentration. However, AZO films annealed in 95 N2/5 H2 atmosphere exhibited a low resistivity of 2. 09 × 10-3Ω·cm. The excellent conductivity was ascribed to both the increase in concentration of oxygen vacancies and desorption of adsorbed oxygen. The optical transmittances of AZO films were higher than 85% in the visible wavelength region ranging 400 ～ 800 nm.

Keyword：Al-doped ZnO films;annealing ambient;sol-gel method;electro-optical property;