Abstract：The influence of annealing treatment in O2 atmosphere on the properties of indium-tin-oxide ( ITO) film was investigated by AFM, XPS and Hall techniques. After annealing, the roughness of ITO thin film was increased, and the optical transmittance was a little decreased. The resistivity of ITO thin film annealing for half an hour was nearly tripled. Moreover, the hole injection from ITO thin film into organic semiconductor was significantly enhanced via annealing, and the performance of organic light emitting diode was improved much. The variation of the optical and electrical properties of ITO can be attributed to the fact that the annealing treatment change the chemical composition of the surface.

Keyword：ITO;chemical composition of surface;annealing treatment;