doi:10.16186/j.cnki.1673-9787.2020.2.22

Received:2019/05/20

Revised:2019/06/28

Published:2020/03/15

Effect of Co doping concentration on magnetic properties of SiC films

GUO Yanhua1, ZHOU Sihua2, SUN Xianke2, ZHOU Xiaodong1

1.School of Mechanical and Electrical Engineering， Zhoukou Normal University， Zhoukou  466001 ， Henan， China;2.School of Physics and Telecommunication Engineering， Zhoukou Normal University ，Zhoukou  466001 ， Henan， China

Abstract:To study the effect of the Co doping concentration on the magnetic properties of SiC film， SiC thin films with different Co contents were made by magnetron sputtering technology. The structure， composition and magnetic properties of the films were characterized by XRD， X-ray photoelectron spectroscopy and physical properties testing system. Analysis showed that the film had a crystal structure of 3C-SiC. with the doping element content increased， 3C-SiC crystal peaks moved to a small angle. The doped elements existed in the form of Co²⁺ ions， forming the second phase compound of CoSi. With the increase of Co doping concentration， the content of the second phase compound of CoSi increased. Magnetic tests showed that the SiC doped with Co element had a ferromagnetic feature at room temperature， as the Co content increased， the saturation magnetization of the film first increased， then decreased. The defects formed by doping Co atoms entering SiC lattice were the reasons for the magnetism of thin films， which belonged to the ferromagnetism induced by doping defects. The second phase compound CoSi inhibited the ferromagnetism of the film.

Key words:SiC film；Co-doped；ferromagnetism；doping defect

Co掺杂浓度对SiC薄膜磁性能的影响_郭艳花.pdf